DOI : https://doi.org/10.18517/ijaseit.15.3.12831

Effect of Different Back Surface Field Layers on Performance of CuO Solar Cell Using SCAPS-1D: Numerical Investigation

Mushtaq Talib Mohsin (1), Sadeq S Mashaan (2), Waqar Abbas Khudhair (3), Emad Kamil Hussein (4), Hussein Kadhim Sharaf (5), Simuzar Mammadova Sultan Sultan (6)
(1) Optometry Techniques Department, Mussaib Technical College, Al Furat Al Awsat Technical University, Babil, Iraq
(2) Prosthetics and Orthotics Department, Mussaib Technical College, Al Furat Al Awsat Technical University, Babil, Iraq
(3) Mechanical Power Engineering Department, Mussaib Technical College, Al Furat Al Awsat Technical University, Babil, Iraq
(4) Mechanical Power Engineering Department, Mussaib Technical College, Al Furat Al Awsat Technical University, Babil, Iraq
(5) Al Muqdad College of Educationn, University of Diyala, Iraq
(6) Department of Business Management, Azerbaijan State University of Economics (ASEU), Baku, Azerbaijan
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M. T. Mohsin, S. S. Mashaan, W. A. Khudhair, E. K. Hussein, H. K. Sharaf, and S. M. S. Sultan, “Effect of Different Back Surface Field Layers on Performance of CuO Solar Cell Using SCAPS-1D: Numerical Investigation”, Int. J. Adv. Sci. Eng. Inf. Technol., vol. 15, no. 3, pp. 894–900, Jun. 2025.
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The current global shortage of electrical power, among other types of energy, is creating immense suffering among the world's human population, according to this study. An analysis was conducted numerically using the Solar Cell Capacitance Simulator (SCAPS-1D) on thin-film solar cells based on copper oxide (CuO). Therefore, this state of affairs has evolved into the core concept of the ongoing investigation into improving photovoltaic power generation.    Investigations on the effects of different Back Surface field (BSF) layers on photovoltaic system performance included a wide range of BSF layers, including as CuSbS2, ZnTe, CuTe, and SnS. To examine specific characteristics, the selected absorber and its associated back surface field (BSF) layers were modified by varying their thicknesses. Voltage open-circuit (VOC), current density in a short circuit (J SC), fill factor (FF), and total power conversion efficiency (η) were the variables that were used. Because of this, we were able to look at these crucial parts. Upon examining the results and configurations achieved, the ZnTe BSF layer was found to have the highest efficiency at 32.68%. There has also been an investigation into how the device's performance is affected by its operating temperature, which is an extra interesting topic. The results show that efficiency generally decreases as temperature increases.   This situation has arisen because of an increased reverse saturation current and a higher recombination rate.

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