The Structural and Electrical Properties of Nanostructures ZnO Thin Films on Flexible Substrate

Nur Sa’adah Muhamad Sauki (1), Nur Amalina Muhamad (2), Fazlinashatul Suhaidah Zahid (3), Sukreen Hana Herman (4), Zairi Ismael Rizman (5)
(1) Faculty of Electrical Engineering, Universiti Teknologi MARA, 81750 Masai, Johor, Malaysia
(2) Faculty of Electrical Engineering, Universiti Teknologi MARA, 81750 Masai, Johor, Malaysia
(3) Faculty of Electrical Engineering, Universiti Teknologi MARA, 81750 Masai, Johor, Malaysia
(4) NANO-ElecTronic Centre, Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
(5) Universiti Teknologi MARA
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How to cite (IJASEIT) :
Muhamad Sauki, Nur Sa’adah, et al. “The Structural and Electrical Properties of Nanostructures ZnO Thin Films on Flexible Substrate”. International Journal on Advanced Science, Engineering and Information Technology, vol. 7, no. 3, June 2017, pp. 822-8, doi:10.18517/ijaseit.7.3.986.
Zinc oxide (ZnO) thin films were deposited on Teflon substrates by radio frequency (RF) magnetron sputtering method at different substrate temperature. The dependence of residual stress on the substrate temperature was investigated in this work due to the growth process, the bombardment of energetic particles and process heating to the deposited thin films. From field emission scanning electron microscope (FESEM) images, samples that deposited at various substrate temperatures consists nano-sized particles. The obtained X-ray diffraction (XRD) results, it suggested that ZnO thin film deposited at 40oC with highly c-axis oriented shows unstressed film compared to other thin films. Besides that, the ZnO thin films deposited at 40oC shows improved electrical properties.

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